10月24日，由SEMI(國際半導體設備與材料協(xié)會(huì ))中國主辦，南昌高新區企業(yè)中微半導體設備公司承辦的化合物半導體制程設備及技術(shù)研討會(huì )在南昌舉行，南昌市發(fā)改委副主任鐘堅、南昌市科技局副局長(cháng)黃端偉、高新區管委會(huì )副調研員楊磊出席會(huì )議。

作為業(yè)內專(zhuān)業(yè)性極強的學(xué)術(shù)會(huì )議，本次研討會(huì )邀請了國內半導體行業(yè)眾多知名企業(yè)家和專(zhuān)家學(xué)者，重點(diǎn)探討化合物半導體領(lǐng)域SiC器件、GaN功率電子、MicroLED顯示最新技術(shù)進(jìn)展，以及核心制程設備對于新技術(shù)快速發(fā)展過(guò)程中所面臨的挑戰。北京世紀金光半導體有限公司有幸受邀首次參加研討會(huì )，并以“Next Generation SiC Power Device Design, Fabrication Technology and Trends”為題，與業(yè)內學(xué)者共同探討第三代半導體碳化硅技術(shù)的應用與發(fā)展。

近年來(lái)，隨著(zhù)以碳化硅(SiC)、氮化鎵(GaN)為主的第三代化合物半導體新材料陸續應用在二極管、金屬氧化物場(chǎng)效應晶體管、高電子遷移率晶體管等器件上，新技術(shù)革命的序幕已經(jīng)拉開(kāi)，高成長(cháng)性的應用市場(chǎng)雛形已經(jīng)初現。作為全球性戰略材料的制高點(diǎn)，碳化硅功率器件因其耐高壓、低損耗、高效率等特性，在高溫、高頻、大功率、光電子以及抗輻射等方面具有巨大的應用潛力。除了民用領(lǐng)域外，在航天、軍工、核能等極端環(huán)境應用有著(zhù)不可替代的優(yōu)勢。

Abstract：Silicon Carbide (SiC) is an attractive material for power semiconductor devices due to its high thermal conductivity, high saturated drift velocity, and high breakdown electric field. SiC power devices, such as SiC SBDs, MOSFETs and JFETs, have been commercialized With a wide range of applications including power supplies, electric vehicles, industrial equipment, and electrical appliances. Pursuing lower cost, less conduction loss and higher performance, new device designs  are being hotly discussing and researching, including trench device, floating junction device , super junction device and trench super junction device. Especially for SiC SBD and MOSFET, trench structures are the main develop trends for the next generation design. Those new designs raise more requirements and challenges for the fabrication technology. CENGOL has developed several novel SBD and MOSFET designs, fabrication process and prototypes, promising to improve the process cost and device performance.

Key words: SiC; SBD; MOSFET;Trench Device;Fabrication Process